Boron engineering of graphene-based materials has emerged as a powerful approach to modulate the intrinsic physicochemical limitations of pristine graphene.[1] While graphene exhibits outstanding electrical conductivity and high specific surface area, its chemically inert basal plane restricts its performance in environmental remediation. Substitutional boron doping introduces electron-deficient sites within the carbon lattice, alters charge density distribution, induces p-type characteristics, and generates structural defects that act as catalytically active centers. Such electronic and structural perturbations have been shown to significantly enhance electrochemical activity, surface reactivity, and pollutant degradation efficiency, highlighting boron incorporation as a key strategy for next-generation graphene-based environmental materials.
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